2SC2668 0.02a , 40v npn plastic-encapsulated transistor elektronische bauelemente 09-apr-2012 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. 3 base 1 emitter collector 2 rohs compliant product a suffix of -c specifies halogen & lead-free features small reverse transfer capacitance. low noise figure. classification of h fe product-rank 2SC2668-r 2SC2668-o 2SC2668-y range 40~80 70~140 100~200 absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit collector to base voltage v cbo 40 v collector to emitter voltage v ceo 30 v emitter to base voltage v ebo 4 v collector current - continuous i c 20 ma collector power dissipation p c 200 mw junction, storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a =25c unless otherwise specified) parameter symbol min. typ. max. unit test condition collector to base breakdown voltage v (br)cbo 40 - - v i c =100 a, i e =0 collector to emitter breakdown voltage v (br)ceo 30 - - v i c =1ma, i b =0 emitter to base breakdown voltage v (br)ebo 4 - - v i e =100 a, i c =0 collector cutCoff current i cbo - - 0.5 a v cb =40v, i e =0 emitter cutCoff current i ebo - - 0.5 a v eb =4v, i c =0 dc current gain h fe 40 - 200 v ce =6v, i c =1ma reverse transfer capacitance c re - 0.7 - pf v ce =6v, f=1mhz collector-base time constant c c ? r bb - - 30 ps v ce =6v, i e = -1ma, f=30mhz transition frequency f t - 550 - mhz v ce =6v, i c =1ma power gain gpe - 18 - db v cc =6v, i c =1ma, f=100mhz noise figure nf - - 5 db to-92s ref. millimeter min. max. a 3.90 4.10 b 3.05 3.25 c 1.42 1.62 d 15.1 15.5 e 2.97 3.27 f 0.66 0.86 g 2.44 2.64 h 1.27 ref. j 0.36 0.48 k 0.36 0.51 l 45
2SC2668 0.02a , 40v npn plastic-encapsulated transistor elektronische bauelemente 09-apr-2012 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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